高鹏

 

姓名

高鹏

性别

职务

厦门稀土材料研究中心

课题组组长

职称

研究员

地址

福建省厦门市集美区兑山西珩路258号

邮箱

peng.gaofjirsm.ac.cn

邮编

361021

 

 
 Researchgate:

 https://www.researchgate.net/profile/Peng_Gao6

 Google Scholar:

 https://scholar.google.ch/citations?user=vNFxXk4AAAAJ&hl=en

 

 

 

ORCID iD iconorcid.org/0000-0002-4963-2282

 

    简历:

 

    高鹏,博士,研究员,课题组长。

 

    2017年01月至今 中国科学院海西研究院厦门稀土材料研究所 研究员,课题组长。

 

    研究领域:

 

 

 

 

    近期论文论著:

 

    代表性论著

 
    (1) P. Gao,D. Beckmann,H. N. Tsao,X. Feng,V. Enkelmann,M. Baumgarten,W. Pisula,K. Müllen(*),Dithieno [2, 3‐d; 2′, 3′‐d′] benzo [1, 2‐b; 4, 5‐b′] dithiophene (DTBDT) as Semiconductor for High‐Performance, Solution‐Processed Organic Field‐Effect Transistors,Advanced Materials (Weinheim, Germany),2009.01.01,21(2):213~216 期刊论文;

 
    (2) Y. Zhang(#),P. Gao(*),E. Oveisi,Y. Lee,Q. Jeangros,G. Grancini,S. Paek,Y. Feng,M. K. Nazeeruddin(*),PbI2–HMPA Complex Pretreatment for Highly Reproducible and Efficient CH3NH3PbI3 Perovskite Solar Cells,Journal of the American Chemical Society,2016.01.01,138(43):14380~14387 期刊论文;

 
    (3) P. Gao(#),M. Gr?tzel,M. Nazeeruddin(*),Chemistry of Sensitizers for Dye-sensitized Solar Cells,Royal Society of Chemistry,500000,2014.07.24 学术专著;

 
    (4) P. Gao(#)(*),H. N. Tsao,C. Yi,M. Gr?tzel,M. K. Nazeeruddin(*),Extended π‐Bridge in Organic Dye‐Sensitized Solar Cells: the Longer, the Better?,Advanced Energy Materials,2014.01.01,4(7):1301485 期刊论文;

 
    (5) P. Gao(#)(*),M. Gr?tzel,M. K. Nazeeruddin(*),Organohalide lead perovskites for photovoltaic applications,Energy & Environmental Science,2014.01.01,7(8):2448~2463;

 
    (10) S. Paek(#),I. Zimmermann,P. Gao(*),P. Gratia,K. Rakstys,G. Grancini,M. K. Nazeeruddin(*),M. A. Rub,S. A. Kosa,K. A. Alamry,Donor–π–donor type hole transporting materials: marked π-bridge effects on optoelectronic properties, solid-state structure, and perovskite solar cell efficiency,Chemical Science,2016.01.01,7(9):6068~6075 期刊论文; 

    专利:

 
    (1) M. Kastler,S. Koehler,K. Muellen,P. Gao,D. Beckmann,X. Feng,H. N. Tsao,High performance solution processable semiconductor based on dithieno [2, 3-D: 2′, 3′-D′] benzo [1, 2-B: 4, 5-B′] dithiophene,2013.02.05,美国,US Patent 8,367,717.

 
    (2) M. K. NAZEERUDDIN,P. GAO,M. GRAETZEL,M. J. BRAUN,T. MIYAJI,Dyes, method of making them, and their use in dye-sensitized solar cells,2012.12.28,其他国家,WO Patent 2,012,175,536.

 

    (3)Hole transport layer material and solar cell using hole transport layer material having high photoelectric conversion efficiency 
     P Ganesan, P Gao, MK Nazeeruddin, M Graetzel 
     Kokai Tokkyo Koho (2016), JP 2016100478 A 20160530.

 

 

 

中国科学院海西研究院厦门稀土材料研究中心
地址:福建省厦门市集美区兑山西珩路258号   邮政编码:361021
备案号:闽ICP备14012191号-1
Copyright © 2014 All rights reserved. 版权所有